Infineon BSC090N03LSG: A High-Performance 30V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon BSC090N03LSG stands out as a premier solution, embodying the advanced engineering of Infineon's OptiMOS™ low-voltage power MOSFET technology. This device is specifically designed to meet the rigorous demands of modern applications, from server and telecom power supplies to high-frequency DC-DC converters and motor control systems.

A key highlight of the BSC090N03LSG is its exceptionally low on-state resistance (RDS(on)) of just 0.9 mΩ. This ultra-low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency and reduced power dissipation. Consequently, systems can operate cooler, enhancing longevity and reliability while potentially reducing the need for complex thermal management solutions.

Furthermore, this MOSFET is optimized for high-frequency switching operations. Its low gate charge (Qg) and outstanding figure-of-merit (FOM) ensure rapid switching transitions, which are essential for increasing power density in switch-mode power supplies (SMPS). This allows designers to develop more compact, lighter, and efficient power systems without compromising on performance.

The device is housed in an SuperSO8 package, which offers an excellent power-to-size ratio. This package not only provides superior thermal characteristics but also enables higher current handling capability in a very small footprint, making it ideal for space-constrained applications. The 30V drain-source voltage (VDS) rating makes it a robust choice for a wide array of low-voltage applications, including synchronous rectification in secondary sides of power supplies and battery management systems.

Robustness is another cornerstone of its design. The BSC090N03LSG is characterized by a high avalanche ruggedness and an integrated source-drain diode with excellent reverse recovery characteristics, ensuring reliable operation under harsh conditions and enhancing system-level durability.

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The Infineon BSC090N03LSG is a benchmark in power semiconductor technology, delivering a combination of ultra-low RDS(on), superior switching performance, and exceptional thermal efficiency in a compact package. It empowers engineers to push the boundaries of power design, achieving new levels of efficiency and power density.

Keywords:

1. OptiMOS

2. Low RDS(on)

3. High-Frequency Switching

4. SuperSO8 Package

5. Power Efficiency