Infineon IPB65R110CFD: A High-Performance 650V CoolMOS™ CFD2 Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPB65R110CFD stands out as a premier solution, engineered to meet the rigorous demands of modern high-efficiency switched-mode power supplies (SMPS), server and telecom power systems, industrial drives, and renewable energy applications. As part of Infineon's esteemed CoolMOS™ CFD2 series, this 650V power transistor leverages advanced superjunction (SJ) technology and integrated fast body diode characteristics to deliver exceptional switching performance and robustness.

A key highlight of the IPB65R110CFD is its ultra-low on-state resistance (RDS(on)) of just 110 mΩ maximum. This remarkably low resistance minimizes conduction losses, which is critical for enhancing overall system efficiency, particularly in high-power operations. The reduction in power dissipation not only improves energy savings but also alleviates thermal stress on the system, contributing to longer operational life and reduced cooling requirements.

The incorporation of CoolMOS™ CFD2 technology brings another significant advantage: an intrinsic fast body diode. This feature is especially beneficial in bridge topologies, such as power factor correction (PFC) and LLC resonant converters, where the body diode is frequently utilized. The optimized diode delivers exceptional reverse recovery performance, drastically reducing reverse recovery charges (Qrr) and associated switching losses. This results in lower electromagnetic interference (EMI), smoother switching behavior, and enhanced reliability in hard-switching and soft-switching applications alike.

Furthermore, the IPB65R110CFD is designed with ease of use and integration in mind. Housed in a TO-263-3 (D2PAK) package, it offers a familiar footprint for designers while providing effective thermal management capabilities. The package ensures low thermal resistance, facilitating efficient heat dissipation and supporting high power density designs. This makes the device an ideal choice for space-constrained applications that cannot compromise on performance or reliability.

Infineon has also fortified this transistor with high durability and avalanche ruggedness, ensuring consistent operation under extreme conditions. The combination of low gate charge (Qg) and reduced output capacitance (Coss) further enhances its high-frequency switching capability, allowing for more compact magnetic components and higher power density in end products.

ICGOOODFIND: The Infineon IPB65R110CFD exemplifies cutting-edge power semiconductor innovation, offering designers a superior blend of low conduction loss, fast switching, and diode robustness. It is an optimal choice for next-generation high-efficiency power conversion systems, enabling improved performance, reduced system size, and lower total cost of ownership.

Keywords:

CoolMOS™ CFD2

Ultra-low RDS(on)

Fast body diode

High-efficiency switching

Avalanche ruggedness