Infineon YP2233W: High-Performance Dual N-Channel 60 V MOSFET in a PG-TSDSON-8 Package

The relentless pursuit of higher power density and efficiency in modern electronics drives the need for advanced semiconductor components. Addressing this challenge, Infineon Technologies introduces the YP2233W, a high-performance dual N-channel 60 V MOSFET housed in the compact and efficient PG-TSDSON-8 package. This device is engineered to deliver superior switching performance and thermal management, making it an ideal solution for a wide array of demanding applications.

At the heart of the YP2233W's performance are its two N-channel MOSFETs, which boast a low maximum on-resistance (R DS(on)) of just 19 mΩ (max.) at V GS = 10 V. This exceptionally low resistance is pivotal in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. The 60 V drain-source voltage rating provides a robust operating margin, ensuring reliable performance in environments prone to voltage spikes and transients, such as automotive systems and industrial power supplies.

A key highlight of this component is its advanced packaging. The PG-TSDSON-8 (8-pin Dual Small Outline No-Lead) package features an exposed thermal pad, which drastically improves heat dissipation by allowing efficient thermal transfer to the PCB. This design enables the MOSFET to handle high continuous drain currents (I D) of up to 13 A per channel while maintaining a low junction temperature, thereby enhancing long-term reliability and power handling capabilities. The minimized package footprint also aids designers in achieving more compact and lightweight end-products without compromising on power.

The switching characteristics of the YP2233W are equally impressive. The device features low gate charge (Q G) and low capacitance, which enables fast switching speeds. This is crucial for high-frequency switching regulators, DC-DC converters, and motor drive circuits, where switching losses can significantly impact overall efficiency. By reducing these losses, the YP2233W helps systems achieve higher operating frequencies, which in turn allows for the use of smaller passive components like inductors and capacitors.

Typical applications for this powerful dual MOSFET include:

Automotive Systems: LED lighting modules, engine control units (ECUs), and power distribution.

Power Management: Synchronous rectification in SMPS, DC-DC buck and boost converters.

Motor Control: Driving and braking circuits for brushed DC motors.

Load Switching: High-side and low-side switches in industrial and communication systems.

ICGOODFIND: The Infineon YP2233W stands out as a highly efficient and robust power switching solution, perfectly balancing low on-resistance, excellent thermal performance, and a minimized form factor. It empowers engineers to push the boundaries of power density and efficiency in next-generation electronic designs.

Keywords: Dual N-Channel MOSFET, Low R DS(on), PG-TSDSON-8 Package, 60 V Power Switching, High Efficiency.